AUIRFR5305 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRFR5305
Manufacturer

Infineon
ChipWorker Part#

CW12298103
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 55V 31A
Documentation

Datasheet

AUIRFR5305 Global Supplier

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AUIRFR5305 Specifications

Attribute	Attribute Value

Part Number	AUIRFR5305
Manufacturer	Infineon
ChipWorker Part#	CW12298103
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	110 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.065 Ω
Polarity	P-CH
Power Dissipation	110 W
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	31A
Rise Time	66 ns
Input Capacitance (Ciss)	1200pF @25V(Vds)
Fall Time	63 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRFR5305 is a HEXFET® single P-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
Advanced planar technology
Dynamic dV/dt rating
Fully avalanche rating
Repetitive avalanche allowed up to Tjmax

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