AUIRFS4610 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRFS4610
Manufacturer

Infineon
ChipWorker Part#

CW13501896
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 73A
Documentation

Datasheet

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AUIRFS4610 Specifications

Attribute	Attribute Value

Part Number	AUIRFS4610
Manufacturer	Infineon
ChipWorker Part#	CW13501896
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	190 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.011 Ω
Polarity	N-CH
Power Dissipation	190 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	73A
Rise Time	87 ns
Input Capacitance (Ciss)	3550pF @50V(Vds)
Fall Time	70 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.67 mm
Size-Width	11.3 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The AUIRFS4610 is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Enhanced dV/dt and di/dt capability
Repetitive avalanche allowed up to Tjmax

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