AUIRLR3110Z - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

AUIRLR3110Z
Manufacturer

Infineon
ChipWorker Part#

CW38535175
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 63A
Documentation

Datasheet

AUIRLR3110Z Global Supplier

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AUIRLR3110Z Specifications

Attribute	Attribute Value

Part Number	AUIRLR3110Z
Manufacturer	Infineon
ChipWorker Part#	CW38535175
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.011 Ω
Polarity	N-CH
Power Dissipation	140 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	63A
Rise Time	110 ns
Input Capacitance (Ciss)	3980pF @25V(Vds)
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The AUIRLR3110Z is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Logic level gate drive
Repetitive avalanche allowed up to Tjmax

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