BAS116E6327HTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BAS116E6327HTSA1
Manufacturer

Infineon
ChipWorker Part#

CW19435242
Category

Schottky Diode
Package

SOT-23-3
Description

INFINEON BAS116E6327HTSA1 Small Signal Diode, Single, 75V, 250mA, 1.25V, 1.5µs, 4.5A
Documentation

Datasheet

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BAS116E6327HTSA1 Specifications

Attribute	Attribute Value

Part Number	BAS116E6327HTSA1
Manufacturer	Infineon
ChipWorker Part#	CW19435242
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	80.0 V
Current Rating	250 mA
Output Current	≤250 mA
Breakdown Voltage	75.0 V
Number of Positions	3 Position
Forward Voltage	1.25 V
Polarity	Standard
Power Dissipation	370 mW
Reverse recovery time	1.5 µs
Forward Current	250 mA
Max Forward Surge Current (Ifsm)	4.5 A
Maximum Forward Voltage (Max)	1.25 V
Forward Current (Max)	250 mA
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	150℃ (Max)
Power Dissipation (Max)	370 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1 mm
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BAS 116 E6327 is a silicon Low Leakage Diode feature medium speed switching times.
370mW Total power dissipation
85V Breakdown voltage
2pF Capacitance
Due to technical requirements, components may contain dangerous substances.

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