BAS21E6327HTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BAS21E6327HTSA1
Manufacturer

Infineon
ChipWorker Part#

CW9238153
Category

Small Signal Diode
Package

SOT-23-3
Description

INFINEON BAS21E6327HTSA1 Small Signal Diode, High Voltage, Single, 200V, 250mA, 1V, 50ns, 1A
Documentation

Datasheet

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BAS21E6327HTSA1 Specifications

Attribute	Attribute Value

Part Number	BAS21E6327HTSA1
Manufacturer	Infineon
ChipWorker Part#	CW9238153
Category	Small Signal Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Capacitance	5.00 pF
Power Rating	350 mW
Output Current	≤250 mA
Breakdown Voltage	250 V
Load Current	0.25 A
Number of Positions	3 Position
Forward Voltage	1.25 V
Polarity	Standard
Power Dissipation	350 mW
Reverse recovery time	50 ns
Forward Current	250 mA
Max Forward Surge Current (Ifsm)	1 A
Maximum Forward Voltage (Max)	1 V
Forward Current (Max)	250 mA
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	150℃ (Max)
Power Dissipation (Max)	350 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Obsolete
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BAS 21 E6327 is a silicon Switching Diode features high breakdown voltage. Suitable for high-speed switching applications.
350mW Total power dissipation
250V Breakdown voltage
5pF Capacitance
Due to technical requirements, components may contain dangerous substances.

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