BC546BZL1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC546BZL1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW91616020
Category

BJT Transistor, BJT
Package

TO-226-3
Description

TO-92 NPN 65V 0.1A
Documentation

Datasheet

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BC546BZL1G Specifications

Attribute	Attribute Value

Part Number	BC546BZL1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW91616020
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Frequency	300 MHz
Voltage Rating (DC)	65.0 V
Current Rating	100 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	200 @2mA, 5V
Input Power (Max)	625 mW
DC Current Gain (hFE)	290
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BC546BZL1G from On Semiconductor is a through hole, NPN amplifier transistor in TO-92 package.
Collector to emitter voltage (Vce) of 65V
Collector current (Ic) of 100mA
Power dissipation of 625mW
Operating junction temperature range from -55°C to 150°C
Collector emitter breakdown Voltage of 65V
Collector emitter saturation voltage of 600mV at 10mA collector current

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