BC846ALT3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC846ALT3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3087796
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 65V 0.1A
Documentation

Datasheet

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BC846ALT3G Specifications

Attribute	Attribute Value

Part Number	BC846ALT3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3087796
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Voltage Rating (DC)	65.0 V
Current Rating	100 mA
Halogen Free Status	Halogen Free
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	110 @2mA, 5V
Input Power (Max)	225 mW
DC Current Gain (hFE)	180
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	3.04 mm
Size-Width	2.64 mm
Size-Height	0.94 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Add switching and amplifying capabilities to your electronic circuit with this NPN BC846ALT3G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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