BC846BLT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC846BLT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW56245
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 65V 0.1A
Documentation

Datasheet

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BC846BLT1G Specifications

Attribute	Attribute Value

Part Number	BC846BLT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW56245
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Voltage Rating (DC)	65.0 V
Current Rating	100 mA
Power Rating	300 mW
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	300 mW
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	200 @2mA, 5V
hFE Max	450
Input Power (Max)	225 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications.
Inductive load protection
Steering logic
Polarity reversal protection
ESD rating - Human body model of >4000V
ESD rating - Machine model of >400V
ESD sensitive device, take proper precaution while handling the device.

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