BC847BPDXV6T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC847BPDXV6T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2653463
Category

BJT Transistor, BJT
Package

SOT-563-6
Description

SOT-563 NPN+PNP 50V 0.1A
Documentation

Datasheet

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BC847BPDXV6T1G Specifications

Attribute	Attribute Value

Part Number	BC847BPDXV6T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2653463
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-563-6
Frequency	100 MHz
Current Rating	100 mA
Halogen Free Status	Halogen Free
Number of Positions	6 Position
Polarity	NPN, PNP
Power Dissipation	500 mW
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.1A
hFE Min	200 @2mA, 5V
Input Power (Max)	357 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-50 ℃
Power Dissipation (Max)	357 mW
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Size-Length	1.7 mm
Size-Width	1.3 mm
Size-Height	0.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Use this versatile npn and PNP BC847BPDXV6T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6@NPN|5@PNP V.

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