BC847CE6327HTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC847CE6327HTSA1
Manufacturer

Infineon
ChipWorker Part#

CW14199011
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 45V 0.1A
Documentation

Datasheet

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BC847CE6327HTSA1 Specifications

Attribute	Attribute Value

Part Number	BC847CE6327HTSA1
Manufacturer	Infineon
ChipWorker Part#	CW14199011
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	250 MHz
Voltage Rating (DC)	45.0 V
Current Rating	100 mA
Power Rating	330 mW
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	330 mW
Gain Bandwidth Product	250 MHz
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.1A
hFE Min	420
hFE Max	800
Input Power (Max)	330 mW
DC Current Gain (hFE)	110
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	330 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BC 847C E6327 is a NPN silicon AF Transistor features high current gain and low collector-emitter saturation voltage. This BC 847C E6327 silicon transistor is designed for AF input stages and drivers applications.
Low noise between 30Hz and 15kHz
AEC-Q101 Qualified

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