BC848ALT1G - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoBC848ALT1G
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ManufacturerON Semiconductor
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ChipWorker Part#CW3010230
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CategoryBJT Transistor, BJT
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PackageSOT-23-3
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DescriptionSOT-23 NPN 30V 0.1A
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DocumentationDatasheet
Payment Methods and Delivery
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BC848ALT1G Global Supplier
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BC848ALT1G Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | BC848ALT1G |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW3010230 |
| Category | BJT Transistor, BJT |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Frequency | 100 MHz |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 100 mA |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 110 @2mA, 5V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 110 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| expand all | |
| Size-Length | 3.04 mm |
| Size-Width | 2.64 mm |
| Size-Height | 1.11 mm |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- This specially engineered NPN BC848ALT1G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
Delivery
Chipworker Certification
Ordering Information
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