BC849BLT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC849BLT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11649159
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 30V 0.1A
Documentation

Datasheet

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BC849BLT1G Specifications

Attribute	Attribute Value

Part Number	BC849BLT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11649159
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Voltage Rating (DC)	30.0 V
Current Rating	100 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	0.1A
hFE Min	200 @2mA, 5V
Input Power (Max)	300 mW
DC Current Gain (hFE)	290
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Width	1.3 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BC849BLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
Moisture sensitivity level-1
AEC-Q101 qualified and PPAP capable
>4000V Human body model and >400V machine model - ESD rating

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