BC856BDW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC856BDW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2577800
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 PNP 65V 0.1A
Documentation

Datasheet

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BC856BDW1T1G Specifications

Attribute	Attribute Value

Part Number	BC856BDW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2577800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Frequency	100 MHz
Voltage Rating (DC)	-65.0 V
Current Rating	-100 mA
Number of Positions	6 Position
Polarity	PNP
Power Dissipation	380 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	220 @2mA, 5V
Input Power (Max)	380 mW
DC Current Gain (hFE)	220
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications.
Halogen-free
-55 to 150°C Junction temperature range

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