BC856S - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC856S
Manufacturer

NXP
ChipWorker Part#

CW96195147
Category

BJT Transistor, BJT
Package

SOT-363
Description

Bipolar (BJT) Array Transistor, GENERAL PURPOSE, Dual PNP, -65V, 220mW, -100mA, 110, SOT-363
Documentation

Datasheet

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BC856S Specifications

Attribute	Attribute Value

Part Number	BC856S
Manufacturer	NXP
ChipWorker Part#	CW96195147
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363
Number of Positions	6 Position
Polarity	PNP
Power Dissipation	220 mW
hFE Min	110
DC Current Gain (hFE)	110
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	250 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1.1 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BC856S is a dual PNP Bipolar Transistor Array in a very small surface-mount plastic package. It is suitable for general-purpose switching and amplification applications.
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors

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