BC857CDW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC857CDW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW19466348
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 PNP 45V 0.1A
Documentation

Datasheet

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BC857CDW1T1G Specifications

Attribute	Attribute Value

Part Number	BC857CDW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW19466348
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Frequency	100 MHz
Voltage Rating (DC)	-45.0 V
Current Rating	-100 mA
Number of Positions	6 Position
Polarity	PNP
Power Dissipation	380 mW
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.1A
hFE Min	420 @2mA, 5V
Input Power (Max)	380 mW
DC Current Gain (hFE)	270
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-50 ℃
Junction Temperature	-55℃ ~ 150℃
Power Dissipation (Max)	380 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The BC857CDW1T1G is a dual PNP general purpose Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
AEC-Q101 qualified and PPAP capable

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