BC858BLT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BC858BLT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2038793
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 PNP 30V 0.1A
Documentation

Datasheet

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BC858BLT1G Specifications

Attribute	Attribute Value

Part Number	BC858BLT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2038793
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	100 MHz
Voltage Rating (DC)	-30.0 V
Current Rating	-100 mA
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	0.1A
hFE Min	220 @2mA, 5V
Input Power (Max)	225 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The BC858BLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
AEC-Q101 qualified and PPAP capable

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