BCP5316TA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BCP5316TA
Manufacturer

Diodes
ChipWorker Part#

CW8953268
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans GP BJT PNP 80V 1A 2000mW Automotive 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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BCP5316TA Specifications

Attribute	Attribute Value

Part Number	BCP5316TA
Manufacturer	Diodes
ChipWorker Part#	CW8953268
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	150 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	-1.00 A
Power Rating	2 W
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	1A
hFE Min	100 @150mA, 2V
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2 W
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Design various electronic circuits with this versatile PNP BCP5316TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

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