BCP68T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BCP68T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW2348703
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 NPN 20V 1A
Documentation

Datasheet

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BCP68T1G Specifications

Attribute	Attribute Value

Part Number	BCP68T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW2348703
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	60 MHz
Voltage Rating (DC)	20.0 V
Current Rating	1.00 A
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	1.5 W
Breakdown Voltage (Collector to Emitter)	20 V
Continuous Collector Current	1A
hFE Min	85 @500mA, 1V
Input Power (Max)	1.5 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1.5 W
	expand all
Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.65 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The BCP68T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in low voltage and high current applications. The device is housed in the package which is designed for medium power surface-mount applications. This package ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
Can be soldered using wave or reflow
AECQ101 qualified and PPAP capable
PNP complement is BCP69T1

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