BCV29 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BCV29
Manufacturer

NXP
ChipWorker Part#

CW114808000
Category

BJT Transistor, BJT
Package

SOT-89
Description

NXP BCV29 Bipolar Transistor Array, Dual NPN, 30V, 1.3W, 500mA, 4000 hFE, SOT-89
Documentation

Datasheet

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BCV29 Specifications

Attribute	Attribute Value

Part Number	BCV29
Manufacturer	NXP
ChipWorker Part#	CW114808000
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.3 W
DC Current Gain (hFE)	4000
Operating Temperature (Max)	150 ℃
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Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2015/12/17

Product Description

• High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). • Preamplifier input applications. • NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. • PNP complements: BCV28。

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