BCX5516TA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BCX5516TA
Manufacturer

Diodes
ChipWorker Part#

CW8606244
Category

BJT Transistor, BJT
Package

SOT-89-3
Description

Trans GP BJT NPN 60V 1A 1000mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet

BCX5516TA Global Supplier

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BCX5516TA Specifications

Attribute	Attribute Value

Part Number	BCX5516TA
Manufacturer	Diodes
ChipWorker Part#	CW8606244
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Frequency	150 MHz
Voltage Rating (DC)	60.0 V
Current Rating	1.00 A
Polarity	NPN
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	1A
hFE Min	100 @150mA, 2V
hFE Max	100 @150mA, 2V
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.6 mm
Size-Width	2.6 mm
Size-Height	1.6 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

Implement this NPN BCX5516TA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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