BD135G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD135G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW20410866
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 45V 1.5A
Documentation

Datasheet

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BD135G Specifications

Attribute	Attribute Value

Part Number	BD135G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW20410866
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	45.0 V
Current Rating	1.50 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.25 W
Breakdown Voltage (Collector to Emitter)	45 V
Thermal Resistance	10℃/W (RθJC)
Continuous Collector Current	1.5A
hFE Min	40 @150mA, 2V
Input Power (Max)	1.25 W
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1250 mW
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Size-Length	7.8 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W**
This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
•High DC Current Gain
•BD 135, 137, 139 are complementary with BD 136, 138, 140
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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