BD139 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD139
Manufacturer

ST Microelectronics
ChipWorker Part#

CW34068
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 80V 3A 1250mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD139 Specifications

Attribute	Attribute Value

Part Number	BD139
Manufacturer	ST Microelectronics
ChipWorker Part#	CW34068
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	50 MHz
Voltage Rating (DC)	80.0 V
Current Rating	1.50 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.25 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	40 @150mA, 2V
hFE Max	250
Input Power (Max)	1.25 W
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1250 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology. Used for audio amplifiers and drivers, utilizing complementary or quasi complementary circuits.
Collector to emitter voltage (Vce) is 80V
Collector current (Ic) is 1.5A
Power dissipation (Pd) is 12.5W
Collector to emitter saturation voltage of 500mV at 0.5A collector current
DC current gain (hFE) of 25 at 0.5A collector current
Operating junction temperature range from 150°C

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