BD159 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD159
Manufacturer

ON Semiconductor
ChipWorker Part#

CW143241396
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225-3 NPN 350V 0.5A
Documentation

Datasheet

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BD159 Specifications

Attribute	Attribute Value

Part Number	BD159
Manufacturer	ON Semiconductor
ChipWorker Part#	CW143241396
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-126-3
Voltage Rating (DC)	350 V
Current Rating	500 mA
Polarity	NPN
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	0.5A
hFE Min	30
hFE Max	240
Input Power (Max)	20 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

Plastic Medium Power NPN Silicon Transistor
This device is designed for power output stages for television, radio, phonograph and other consumer product applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopad™ Construction Provides High Power Dissipation Rating for High Reliability
• Pb−Free Package is Available

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