BD180G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD180G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW28804800
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 PNP 80V 1A
Documentation

Datasheet

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BD180G Specifications

Attribute	Attribute Value

Part Number	BD180G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW28804800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	3 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	-3.00 A
Power Rating	30 W
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	1A
hFE Min	40 @150mA, 2V
hFE Max	250
Input Power (Max)	30 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30000 mW
	expand all
Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD180G is a 80V PNP medium-power silicon Bipolar Transistor is designed for use in 5 to 10W audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Complementary with BD179

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