BD237 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD237
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1171200
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 80V 2A 25000mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD237 Specifications

Attribute	Attribute Value

Part Number	BD237
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1171200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	3 MHz
Voltage Rating (DC)	100 V
Current Rating	2.00 A
Power Rating	25 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	25 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	25 @1A, 2V
Input Power (Max)	25 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	25000 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD237 is a NPN low voltage Power Transistor manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Low saturation voltage
PNP type is BD238

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