BD237G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD237G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3466661
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 80V 2A
Documentation

Datasheet

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BD237G Specifications

Attribute	Attribute Value

Part Number	BD237G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3466661
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	3 MHz
Voltage Rating (DC)	80.0 V
Current Rating	2.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	25 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	2A
hFE Min	25 @1A, 2V
Input Power (Max)	25 W
DC Current Gain (hFE)	3
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD237G is a 2A NPN medium-power Bipolar Transistor designed for use in 5 to 10W audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Complementary device

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