BD241C - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD241C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8949233
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 100V 3A 40000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

BD241C Global Supplier

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BD241C Specifications

Attribute	Attribute Value

Part Number	BD241C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8949233
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	10 @3A, 4V
hFE Max	25
Input Power (Max)	40 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Size-Width	4.6 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Well-controlled hFE parameter for increased reliability
Collector-base voltage (Vcbo = 100V)
Emitter-base voltage (Vcbo = 5V)

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