BD242B - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD242B
Manufacturer

ST Microelectronics
ChipWorker Part#

CW6402263
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT PNP 80V 3A 3Pin(3+Tab) TO-220
Documentation

Datasheet

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BD242B Specifications

Attribute	Attribute Value

Part Number	BD242B
Manufacturer	ST Microelectronics
ChipWorker Part#	CW6402263
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Number of Positions	3 Position
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	25 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2 W
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This specially engineered PNP BD242B GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

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