BD435 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD435
Manufacturer

ST Microelectronics
ChipWorker Part#

CW150728929
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 32V 4A 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD435 Specifications

Attribute	Attribute Value

Part Number	BD435
Manufacturer	ST Microelectronics
ChipWorker Part#	CW150728929
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	36 W
Breakdown Voltage (Collector to Emitter)	32 V
hFE Min	40 @10mA, 5V
Input Power (Max)	36 W
DC Current Gain (hFE)	140
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	36000 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

DESCRIPTION
The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434,
BD436, and BD438 respectively.
■ SGS-THOMSON PREFERRED SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES

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