BD435G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD435G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13091561
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 32V 4A
Documentation

Datasheet

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BD435G Specifications

Attribute	Attribute Value

Part Number	BD435G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13091561
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	3 MHz
Voltage Rating (DC)	32.0 V
Current Rating	4.00 A
Polarity	NPN
Power Dissipation	36 W
Breakdown Voltage (Collector to Emitter)	32 V
Continuous Collector Current	4A
hFE Min	85 @500mA, 1V
Input Power (Max)	36 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	36000 mW
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Size-Width	2.66 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

4.0 AMPERES POWER TRANSISTORS NPN SILICON
This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications.
Features
•Complementary Types are BD438 and BD442
•These Devices are Pb−Free and are RoHS Compliant

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