BD535 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD535
Manufacturer

ST Microelectronics
ChipWorker Part#

CW104021706
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 60V 8A 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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BD535 Specifications

Attribute	Attribute Value

Part Number	BD535
Manufacturer	ST Microelectronics
ChipWorker Part#	CW104021706
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	8.00 A
Power Dissipation	50 W
Gain Bandwidth Product	12 MHz
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	25 @2A, 2V
Input Power (Max)	50 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	50000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description
The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD534 and BD536.
Features
■ BD533, BD535, and BD537 are NPN transistors

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