BD678 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD678
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8190309
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans Darlington PNP 60V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD678 Specifications

Attribute	Attribute Value

Part Number	BD678
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8190309
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-60.0 V
Current Rating	-4.00 A
Number of Positions	3 Position
Polarity	P-Channel
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	750 @1.5A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD678 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
Good hFE linearity
High fT frequency

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