BD679G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD679G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11168550
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 80V 4A
Documentation

Datasheet

BD679G Global Supplier

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BD679G Specifications

Attribute	Attribute Value

Part Number	BD679G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11168550
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	80.0 V
Current Rating	4.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	4A
hFE Min	750 @1.5A, 3V
hFE Max	750 @1.5A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	40000 mW
	expand all
Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

4.0 AMPERES POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS, 40 WATTS
This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.
Features
•High DC Current Gain:
hFE = 750 (Min) @ IC
= 1.5 and 2.0 Adc
•Monolithic Construction
•BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
•BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
•Pb−Free Packages are Available

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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