BD681G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD681G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW727993
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 100V 4A
Documentation

Datasheet

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BD681G Specifications

Attribute	Attribute Value

Part Number	BD681G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW727993
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	100 V
Current Rating	4.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	4A
hFE Min	750
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	40000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD681G is a NPN bipolar medium-power Darlington Transistor for use as output device in complementary general-purpose amplifier applications.
Monolithic construction
Complementary with BD682

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