BD910 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD910
Manufacturer

ST Microelectronics
ChipWorker Part#

CW108421964
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT PNP 80V 15A 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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BD910 Specifications

Attribute	Attribute Value

Part Number	BD910
Manufacturer	ST Microelectronics
ChipWorker Part#	CW108421964
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	90 W
Breakdown Voltage (Collector to Base)	80.0 V
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	15 @5A, 4V
Input Power (Max)	90 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	90000 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Bipolar (BJT) Transistor PNP 80 V 15 A 3MHz 90 W Through Hole TO-220

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