BD911 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD911
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1482389
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 100V 15A 90000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

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BD911 Specifications

Attribute	Attribute Value

Part Number	BD911
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1482389
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Voltage Rating (DC)	100 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	90 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	15 @5A, 4V
hFE Max	150
Input Power (Max)	90 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	90 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology.
Collector to emitter voltage (Vce) is 100V
Collector current (Ic) is 15A
Power dissipation (Pd) is 90W
Collector to emitter saturation voltage of 3V at 10A collector current
DC current gain (hFE) of 5 at 10A collector current
Operating junction temperature range from 150°C

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