BDV64BG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDV64BG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10239467
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 PNP 100V 10A
Documentation

Datasheet

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BDV64BG Specifications

Attribute	Attribute Value

Part Number	BDV64BG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10239467
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	-100 V
Current Rating	-10.0 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	125 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	10A
hFE Min	1000 @5A, 4V
Input Power (Max)	125 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125000 mW
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Size-Length	15.2 mm
Size-Width	4.9 mm
Size-Height	12.2 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BDV64BG is a -100V Silicon PNP Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
High DC current gain
Collector-base voltage (Vcbo = 100V)
Emitter-base voltage (Vcbo = 5V)

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