BDV66B - Multicomp

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDV66B
Manufacturer

Multicomp
ChipWorker Part#

CW114221275
Category

BJT Transistor, BJT
Package

TO-247
Description

MULTICOMP BDV66B Bipolar (BJT) Single Transistor, Darlington, PNP, 100V, 6MHz, 125W, 16A
Documentation

Datasheet

BDV66B Global Supplier

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BDV66B Specifications

Attribute	Attribute Value

Part Number	BDV66B
Manufacturer	Multicomp
ChipWorker Part#	CW114221275
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	125 W
Operating Temperature (Max)	150 ℃
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RoHS	RoHS Compliant
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor.
Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum)
Collector-emitter saturation voltage(Vceo (sat) = 2V maximum at Ic = 10A)
Collector-base voltage(Vcbo = 100V)
Emitter-base voltage(Vebo = 5V)

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