BDW42G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDW42G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9998326
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 100V 15A
Documentation

Datasheet

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BDW42G Specifications

Attribute	Attribute Value

Part Number	BDW42G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9998326
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	85 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	15A
hFE Min	1000 @5A, 4V
Input Power (Max)	85 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	85000 mW
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BDW42G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose and low speed switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
High DC current gain
Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
Low collector-emitter saturation voltage

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