BDW93C - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDW93C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW782500
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington NPN 100V 12A 80000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

BDW93C Global Supplier

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BDW93C Specifications

Attribute	Attribute Value

Part Number	BDW93C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW782500
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	12.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	80 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	750 @5A, 3V
Input Power (Max)	80 W
DC Current Gain (hFE)	20000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	80000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BDW93C is a 100V Silicon Epitaxial Base NPN Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the BDW94C
Integrated anti-parallel collector-emitter diode
Well-controlled hFE parameter for increased reliability

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