BDW93CFP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDW93CFP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5298450
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220FP NPN 100V 12A
Documentation

Datasheet

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BDW93CFP Specifications

Attribute	Attribute Value

Part Number	BDW93CFP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5298450
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	12.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	33 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	12A
hFE Min	100
Input Power (Max)	33 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	33 W
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BDW93CFP is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a fully moulded insulated package. It is intended for use in power linear and switching applications.
Integrated anti-parallel collector-emitter diode
PNP complementary type is BDW94CFP

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