BDX33BG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX33BG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10341879
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 80V 10A
Documentation

Datasheet

BDX33BG Global Supplier

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BDX33BG Specifications

Attribute	Attribute Value

Part Number	BDX33BG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10341879
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	80.0 V
Current Rating	10.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	70 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	10A
hFE Min	750 @3A, 3V
hFE Max	750 @3A, 3V
Input Power (Max)	70 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	70000 mW
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Size-Length	10.53 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The BDX33BG is a 10A PNP bipolar power Darlington Transistor designed for general purpose and low speed switching applications.
Complementary device
Monolithic construction with built-in base emitter shunt resistors
Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum @ IC = 3A DC

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