BDX34C - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX34C
Manufacturer

ST Microelectronics
ChipWorker Part#

CW7791111
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Transistor: PNP; Darlington + diode; 100V; 10A; 70W; TO220
Documentation

Datasheet

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BDX34C Specifications

Attribute	Attribute Value

Part Number	BDX34C
Manufacturer	ST Microelectronics
ChipWorker Part#	CW7791111
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	70 W
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	70 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	750 @3A, 3V
Input Power (Max)	70 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	70000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the BDX33C
Well-controlled hFE parameter for increased reliability

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