BDX53BFP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX53BFP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW133121140
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220FP NPN 80V 8A
Documentation

Datasheet

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BDX53BFP Specifications

Attribute	Attribute Value

Part Number	BDX53BFP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW133121140
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Polarity	NPN
Power Dissipation	29 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	8A
hFE Min	750 @3A, 3V
Input Power (Max)	29 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	29 W
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medium power linear and switching applications.
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING AND AMPLIFIER
■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

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