BF721T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BF721T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW22628966
Category

BJT Transistor, BJT
Package

TO-261-4
Description

SOT-223 PNP 300V 0.05A
Documentation

Datasheet

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BF721T1G Specifications

Attribute	Attribute Value

Part Number	BF721T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW22628966
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	60 MHz
Voltage Rating (DC)	-300 V
Current Rating	-100 mA
Polarity	PNP, P-Channel
Power Dissipation	1.5 W
Breakdown Voltage (Collector to Emitter)	300 V
Continuous Collector Current	0.05A
hFE Min	50 @25mA, 20V
Input Power (Max)	1.5 W
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1.5 W
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The three terminals of this PNP BF721T1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

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