BFS17WH6327XTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFS17WH6327XTSA1
Manufacturer

Infineon
ChipWorker Part#

CW44464603
Category

BJT Transistor, BJT
Package

SOT-323-3
Description

Trans RF BJT NPN 15V 0.025A 3Pin SOT-323 T/R
Documentation

Datasheet

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BFS17WH6327XTSA1 Specifications

Attribute	Attribute Value

Part Number	BFS17WH6327XTSA1
Manufacturer	Infineon
ChipWorker Part#	CW44464603
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-323-3
Frequency	2500 MHz
Number of Positions	3 Position
Power Dissipation	280 mW
Input Capacitance	0.9 pF
Breakdown Voltage (Collector to Emitter)	15 V
hFE Min	40 @2mA, 1V
Input Power (Max)	280 mW
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	280 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Look no further than the BFS17WH6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This product"s minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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