BFU530AR - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFU530AR
Manufacturer

NXP
ChipWorker Part#

CW19126303
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

Trans RF BJT NPN 16V 0.065A 450mW Automotive 3Pin TO-236AB T/R
Documentation

Datasheet

BFU530AR Global Supplier

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BFU530AR Specifications

Attribute	Attribute Value

Part Number	BFU530AR
Manufacturer	NXP
ChipWorker Part#	CW19126303
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Power Dissipation	450 mW
Input Capacitance	0.83 pF
Output Power	10 dBm
Breakdown Voltage (Collector to Emitter)	12 V
Gain	18 dB
hFE Min	60 @10mA, 8V
Input Power (Max)	450 mW
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	450 mW
Supply Voltage	24 V
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The BFU530AR RF amplifier from NXP Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

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