BFU580GX - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFU580GX
Manufacturer

NXP
ChipWorker Part#

CW54852866
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans RF BJT NPN 16V 0.1A 1000mW Automotive 4Pin(3+Tab) SC-73 T/R
Documentation

Datasheet

BFU580GX Global Supplier

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BFU580GX Specifications

Attribute	Attribute Value

Part Number	BFU580GX
Manufacturer	NXP
ChipWorker Part#	CW54852866
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	4 Position
Power Dissipation	1000 mW
Input Capacitance	1.5 pF
Gain Bandwidth Product	11 GHz
Breakdown Voltage (Collector to Emitter)	12 V
Gain	10.5 dB
hFE Min	60
hFE Max	130
Input Power (Max)	1 W
DC Current Gain (hFE)	95
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Are you looking for a component that can handle high power radio frequencies? NXP Semiconductors" BFU580GX RF amplifier is your solution. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

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