BFU590GX - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFU590GX
Manufacturer

NXP
ChipWorker Part#

CW14456761
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans RF BJT NPN 16V 0.3A 2000mW Automotive 4Pin(3+Tab) SC-73 T/R
Documentation

Datasheet

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BFU590GX Specifications

Attribute	Attribute Value

Part Number	BFU590GX
Manufacturer	NXP
ChipWorker Part#	CW14456761
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Number of Positions	4 Position
Power Dissipation	2 W
Input Capacitance	3.9 pF
Gain Bandwidth Product	8.5 GHz
Breakdown Voltage (Collector to Emitter)	12 V
Gain	8 dB
hFE Min	60 @80mA, 8V
hFE Max	130
Input Power (Max)	2 W
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	2000 mW
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

With this BFU590GX RF amplifier from NXP Semiconductors your circuit will be operating at high RF frequencies. This RF transistor has an operating temperature range of -40 °C to 150 °C.

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