BFU910FX - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BFU910FX
Manufacturer

NXP
ChipWorker Part#

CW47138203
Category

BJT Transistor, BJT
Package

SOT-343
Description

Trans GP BJT NPN 3V 0.015A 4Pin SOT-343F
Documentation

Datasheet

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BFU910FX Specifications

Attribute	Attribute Value

Part Number	BFU910FX
Manufacturer	NXP
ChipWorker Part#	CW47138203
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-343
Number of Positions	4 Position
Power Dissipation	300 mW
Input Capacitance	0.3 pF
Breakdown Voltage (Collector to Emitter)	9.5 V
Gain	13.5 dB
Input Power (Max)	300 mW
DC Current Gain (hFE)	1200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	300 mW
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Designed with semiconductor technology, this BFU910FX RF amplifier from NXP Semiconductors easily operates at high RF frequencies. This product"s minimum DC current gain is 655. It has a maximum collector emitter saturation voltage of 1 V. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 85 °C.

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